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; ; ; Motoki, Ryozo;
Int.J.Appl.Radiat.Isot., 36(7), p.564 - 565, 1985/00
Times Cited Count:9 Percentile:81.06(Nuclear Science & Technology)no abstracts in English
; ;
Int.J.Appl.Radiat.Isot., 36(10), p.807 - 812, 1985/00
Times Cited Count:14 Percentile:83.09(Nuclear Science & Technology)no abstracts in English
; *;
Int.J.Appl.Radiat.Isot., 35(6), p.463 - 466, 1984/00
Times Cited Count:35 Percentile:93.65(Nuclear Science & Technology)no abstracts in English
; ;
Int.J.Appl.Radiat.Isot., 35(9), p.875 - 881, 1984/00
Times Cited Count:38 Percentile:94.45(Nuclear Science & Technology)no abstracts in English
; Kaetsu, Isao
Int.J.Appl.Radiat.Isot., 35(1), p.21 - 24, 1984/00
Times Cited Count:6 Percentile:57.41(Nuclear Science & Technology)no abstracts in English
Saeki, Masakatsu
Int.J.Appl.Radiat.Isot., 34(4), p.739 - 742, 1983/00
no abstracts in English
; ; ; *; *
Int.J.Appl.Radiat.Isot., 34(1), p.429 - 436, 1983/00
Times Cited Count:24 Percentile:89.14(Nuclear Science & Technology)no abstracts in English
Int.J.Appl.Radiat.Isot., 34(3), p.559 - 564, 1983/00
no abstracts in English
;
Int.J.Appl.Radiat.Isot., 34(4), p.687 - 691, 1983/00
no abstracts in English
Fujimura, Takashi; Kaetsu, Isao
Int.J.Appl.Radiat.Isot., 34(6), p.929 - 931, 1983/00
Times Cited Count:13 Percentile:91.35(Nuclear Science & Technology)no abstracts in English
R.K.Barnes*; E.L.R.Hetheringtone*;
Int.J.Appl.Radiat.Isot., 34(3), p.603 - 606, 1983/00
Times Cited Count:3 Percentile:44.36(Nuclear Science & Technology)no abstracts in English
Genka, Tsuguo;
Int.J.Appl.Radiat.Isot., 34(8), p.1067 - 1072, 1983/00
no abstracts in English
; Kaetsu, Isao
Int.J.Appl.Radiat.Isot., 34(10), p.1445 - 1450, 1983/00
Times Cited Count:4 Percentile:50.99(Nuclear Science & Technology)no abstracts in English
; *; *;
Int.J.Appl.Radiat.Isot., 32, p.567 - 572, 1981/00
Times Cited Count:5 Percentile:58.08(Nuclear Science & Technology)no abstracts in English
; *; *
Int.J.Appl.Radiat.Isot., 32, p.17 - 22, 1981/00
Times Cited Count:30 Percentile:93.64(Nuclear Science & Technology)no abstracts in English
;
Int.J.Appl.Radiat.Isot., 32, p.233 - 237, 1981/00
no abstracts in English
Nakashima, Mikio; Saeki, Masakatsu; ; Tachikawa, Enzo
Int.J.Appl.Radiat.Isot., 32, p.397 - 402, 1981/00
Times Cited Count:3 Percentile:45.64(Nuclear Science & Technology)no abstracts in English
; *
Int.J.Appl.Radiat.Isot., 32, p.353 - 354, 1981/00
no abstracts in English
*; ;
Int.J.Appl.Radiat.Isot., 32, p.595 - 599, 1981/00
Times Cited Count:3 Percentile:55.71(Nuclear Science & Technology)no abstracts in English
; *; *
Int.J.Appl.Radiat.Isot., 31, p.703 - 706, 1980/00
Times Cited Count:4 Percentile:48.95(Nuclear Science & Technology)no abstracts in English